Work

A Dynamic Two-Stage Gate Driver for Unlocking the Fast-Switching Potential of GaN HEMT

Year: 2024

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2024.3520671

Authors: Ji Shu, Jiahui Sun, Xinke Wu, Kevin J. Chen

Institutions: Hong Kong University of Science and Technology, Zhejiang University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Innovation and Technology Fund

OpenAlex ID: W4405632278

FWCI: 1.443

Cites: 10

Cited by: 10

Related to: 10