Work

Simultaneously Improved Electrical Characteristics of Ge n/p-FinFETs and Inverter With Oxidized Alloy-Like Hafnium Nitride Interfacial Layer

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3520711

Authors: Dun-Bao Ruan, Kuei-Shu Chang-Liao, Cheng-Han Li, Zefu Zhao, Kai-Jhih Gan

Institutions: Fuzhou University, National Tsing Hua University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1606589457, G8000196001, G8453253503

OpenAlex ID: W4405632519

FWCI: 0.206

Cites: 28

Cited by: 2

Related to: 10