Year: 2024
Type: conference-paper
Abstract: Lateral tunnel epitaxy of InP and InAs membranes on silicon-on-insulator (SOI) substrates is demonstrated. The near dislocation-free III-V membranes exhibit smooth growth fronts and are precisely positioned atop silicon (Si) waveguides or the Si device layer.
Source: IEEE Photonics Conference
Authors: Zhao Yan, Weiwei Zhang, Martin Ebert, Bogdan Ratiu, Graham T. Reed, David J. Thomson, Qiang Li
Institutions: Cardiff University, University of Southampton
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Awards: G2629120339, G5448679942, G9000154049
OpenAlex ID: W4405633152