Year: 2024
Type: conference-paper
Abstract: This paper characterizes N-well, P-well, and P-substrate Schottky photodiodes, at 1310 nm, fabricated in a 65 nm CMOS process, achieving 16.9 mA/W for 0.44 fF/µm2. Documenting the optical behavior and circuit equivalent model enables complete simulation and integration of optical receivers in standard CMOS technology.
Source: IEEE Photonics Conference
Institution: KU Leuven
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4405633545