Work

A Normalizing Flow Based Validity‐Preserving Inverse‐Design Model for Nanoscale MOSFETs

Year: 2024

Type: article

Source: Advanced Theory and Simulations

DOI: 10.1002/adts.202400988

Authors: Aasim Ashai, Oves Badami, Biplab Sarkar

Institutions: Indian Institute of Technology Roorkee, Indian Institute of Technology Hyderabad

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405640937

FWCI: 0.103

Cites: 24

Cited by: 1

Related to: 10