Work

Revealing Self‐Driven Broadband Photodetection Using Heterojunction of Bi2Se3 and Low‐Temperature Laser Molecular Beam Epitaxy Grown GaN on SrTiO3 (100) Substrate

Year: 2024

Type: article

Source: Advanced Materials Technologies

DOI: 10.1002/admt.202401632

Authors: Vishnu Aggarwal, Rahul Kumar, Sudhanshu Gautam, Aditya Yadav, Bipul Kumar Pradhan, Ramakrishnan Ganesan, Govind Gupta, M. Senthil Kumar, Sumeet Walia, Sunil Singh Kushvaha

Institutions: Council of Scientific and Industrial Research, RMIT University, CSIR National Physical Laboratory of India, Academy of Scientific and Innovative Research, Birla Institute of Technology and Science - Hyderabad Campus, Birla Institute of Technology and Science, Pilani

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Engineering Research Board

OpenAlex ID: W4405698419

FWCI: 0.864

Cites: 55

Cited by: 6

Related to: 10