Work

Ferroelectric Domain Wall Warp Memristor

Year: 2024

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c16347

Authors: Pankaj Sharma, Chi-Hou Lei, Yunya Liu, Daniel Sando, Qi Zhang, Nagarajan Valanoor, Jan Seidel

Institutions: Flinders University, UNSW Sydney, ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Flinders Microscopy and Microanalysis, University of Scranton, Xiangtan University, University of Canterbury, Commonwealth Scientific and Industrial Research Organisation, CSIRO Manufacturing

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Australian National Fabrication Facility, Australian Government, Flinders University, National Natural Science Foundation of China, Science and Technology Program of Hunan Province, Australian Research Council

Awards: G1266858300, G2482191521, G3094353475, Programmable Ferroelectric Nanoelectronics for In-memory Computing, G3568299089, Engineered topological nanostructures – a new frontier in materials design, ARC Centre of Excellence in Future Low Energy Electronics Technologies, G8080398698

OpenAlex ID: W4405710468

FWCI: 0.513

Cites: 37

Cited by: 5

Related to: 10