Work

Novel Enhancement-Mode p-Channel GaN MOSFETs With an AlN Insert Layer

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3521276

Authors: Hai Huang, Maolin Pan, Qiang Wang, Xinling Xie, Yannan Yang, Xin Hu, Luyu Wang, Penghao Zhang, Min Xu, David Wei Zhang

Institution: Fudan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405718045

FWCI: 2.378

Cites: 32

Cited by: 16

Related to: 10