Work

Dopant Segregation at the Solid–Liquid Interface in the Single Crystal Growth of β-Ga2O3 by an Edge-Defined Film-Fed Growth Method

Year: 2024

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.4c01343

Authors: Jin Zhang, Shaohua Chen, Yiyuan Liu, Xuyang Dong, Boyang Chen, Yang Li, Zhitai Jia, Xutang Tao, Wenxiang Mu

Institutions: Shandong University, State Key Laboratory of Crystal Materials

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Science, Technology and Innovation Commission of Shenzhen Municipality

Awards: G4997227884, G5047615929, G5950108647, 高质量氧化镓单晶生长、光电性能调控与器件研究, G8263853379

OpenAlex ID: W4405721142

FWCI: 0.545

Cites: 45

Cited by: 7

Related to: 10