Year: 2024
Type: article
Abstract: In this work, the InGaAs/InAlAs multi-gain-stage APD model is established. The gain and the noise performance of multi-gain-stage APDs are analyzed based on DSMT. By studying the influence of different doping concentrations of the dropping layer and the charge layer on the gain and noise characteristics of the device, the photocurrent, dark current, noise, and gain characteristics of the device are analyzed, and the device structure is optimized. The results show that the maximum gain of the three-gain-stage APD is 416, and the noise factor is 3.5 when the gain is 100. The five-gain-stage APD has a maximum gain of 450 and a noise factor of 4.5 when the gain is 100. The maximum gain of the 10-gain-stage APD can reach more than 850, and the noise factor reaches 6.5 when the gain is 100.
Source: Photonics
Institution: Beijing University of Posts and Telecommunications
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,728
Award: G345935972
OpenAlex ID: W4405727554