Work

Gate-Tunable Negative Differential Resistance in WSe2/h-BN/Graphene Heterostructure

Year: 2024

Type: article

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.4c05907

Authors: Inayat Uddin, Nhat Anh Nguyen Phan, Hai Yen Le Thi, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Muhammad Atif Khan, Gil-Ho Kim

Institutions: Sungkyunkwan University, National Institute for Materials Science

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

Awards: G1760515783, G20368804, G852346845

OpenAlex ID: W4405734951

FWCI: 0.568

Cites: 40

Cited by: 6

Related to: 10