Work

Recent Progress and Task of GaN Materials and Devices for Power Applications

Year: 2024

Type: conference-paper

Source: IEEE CPMT Symposium Japan (ICSJ)

DOI: 10.1109/icsj62869.2024.10804668

Author: Yohei Otoki

Institution: Nagoya University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4405754333

FWCI: 1.208

Cites: 3

Cited by: 1

Related to: 10