Work

Progress and Prospects of InAs-Based FinFETs From Process Optimization to Device Architectural Innovation

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3519489

Authors: Yijin Wang, Yuxin Meng, Yan Zhang, Man Luo, Jiarui Zhang, Mei Ge, Jintong Xu, Chenhui Yu

Institutions: Nantong University, Chinese Academy of Sciences, Shanghai Institute of Technical Physics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1031193753, G5694943389, G6565637111, G7321140456

OpenAlex ID: W4405754342

FWCI: 0.411

Cites: 97

Cited by: 4

Related to: 10