Work

Abnormal Degradation of Gate Leakage Current of Schottky-Type p-GaN Gate HEMTs under Repetitive Surge Current Stress

Year: 2024

Type: conference-paper

Source: International Conference on Electronic Information Engineering and Computer Science (EIECS)

DOI: 10.1109/eiecs63941.2024.10800456

Authors: Xiaoming Wang, Wanjun Chen, Yu Shi, Yun Xia

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G7504697052

OpenAlex ID: W4405755272

FWCI: 2.319

Cites: 11

Cited by: 2

Related to: 10