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Experimental Evidence for Local Fading Memory Effects in TaOx ReRAM Cells

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering (MetroXRAINE)

DOI: 10.1109/metroxraine62247.2024.10795989

Authors: N. Schmitt, I. Messaris, A.S. Demirkol, V. Ntinas, D. Prousalis, R. Tetzlaff, A. Ascoli, F. Corinto, M. Gilli, S. Zhang, S. Menzel, V. Rana, L.O. Chua

Institutions: Technische Universität Dresden, Politecnico di Torino, Forschungszentrum Jülich, University of California, Berkeley

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405755620

FWCI:

Cites: 16

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Related to: 10