AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Dual-Metal Gate Architecture for Biosensing Applications
Year: 2024
Type: article
Authors: T. Suresh Babu, U. Saravanakumar
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4405756595