Source Impurity Contributions and Polarity Inverting in the Unintentional Doping of AlxIn1–xAsySb1–y Digital Alloys Grown via Molecular Beam Epitaxy
Year: 2024
Type: article
Source: Crystal Growth & Design
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G4686173092, G7956639249
OpenAlex ID: W4405774116
