Fast carbidization of silicon in additive manufactured Si-C-SiC composite
Year: 2024
Type: article
Abstract: Silicon carbide -based composites are advantageous material for electronic industry. Their application is limited by the difficulty to fabricate complex structural parts. In this research used powder bed additive manufacturing technology, particularly selective laser melting, to manufacture silicon carbide-based composite. However, during the laser sintering silicon carbide decomposed to silicon and carbon. Carbidization of silicon usually needs long duration heat treatment at high temperature. Silicon carbide forms between silicon and carbon which prevents further reaction between the elements. To enhance the carbidization process we heated the samples with ultra-high heating rates (2000 °C/min) using High-Speed Temperature Scanning (HSTS) technique. Formation of silicon carbide takes place intensively, achieving higher density of the samples. We have compared the results with the samples heated at relatively lower heating rates (100 °C/min). The mechanism of interaction was explained. The heating rate has critical effect on silicon-carbon reaction intensity, final microstructure and density of the samples. The carbidizaiton of silicon can be shorten many times.
Source: Results in Materials
Language: English
Subfield: Automotive Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,290
OpenAlex ID: W4405775117