Work

Adjustment of Abrupt Drops in the C-V Curves of Various 4H-SiC MOSFETs and JBS Diodes

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3522278

Authors: Ruei-Ci Wu, Kung-Yen Lee, Pei-Chun Liao

Institution: National Taiwan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, National Science and Technology Council

Awards: G1518260695, G1885414826, G2893418222, G6901760704, G7000494479, G7967636281

OpenAlex ID: W4405778767

FWCI: 0.312

Cites: 18

Cited by: 3

Related to: 10