Work

Reliability-Enhanced Reverse Forming Operation Scheme for Analog Resistive Random-Access Memory

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3521924

Authors: Zhixing Jiang, Yue Xi, Yuyao Lu, Jianshi Tang, Ruofei Hu, Yiwei Du, Bin Gao, He Qian, Huaqiang Wu

Institutions: Beijing National Research Center for Information Science and Technology, Tsinghua University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1416140488, G229158256, G2799636787

OpenAlex ID: W4405778772

FWCI: 0.411

Cites: 23

Cited by: 4

Related to: 10