Demonstration of Robust Retention in Band Engineered FEFETs for NAND Storage Applications Using Tunnel Dielectric Layer
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Authors: Prasanna Venkatesan, Lance Fernandes, Priyankka Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Mengkun Tian, Hang Chen, Winston Chern, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Shimeng Yu, Suman Datta, Wanki Kim, Daewon Ha, Asif Khan
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4405778861