Work

A Novel 4H-SiC Split-Gate CIMOSFET With Improved Electrical Performance Using N-Type Buried Layer

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3522503

Authors: Fei Xie, Yonghao Dong, Fa Li, Jiaxing Wei, Feng Xu

Institutions: Yangzhou University, Southeast University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405778864

FWCI: 0.308

Cites: 14

Cited by: 3

Related to: 10