Work

SnS₂/h-BN/SnSe Tri-Layer Heterojunctions for High Responsivity and Low Dark Current Self-Powered Near-Violet Detector

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3522982

Authors: Xiyu Jia, Weishuai Duan, Mingchen Xu, Gaoning Fan, Pengyu Zhou, Yonghui Zhang, Hongxing Zheng, Mengjun Wang, Chao Fan

Institutions: Hebei University of Technology, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Northeast Electric Power University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jilin Scientific and Technological Development Program

Awards: G1138920530, G4172896762, G4179693527, G5065636696, G7120449597, G749263182, 人工智能激发式类脑芯片电磁完整性关键技术基础研究, G904744729

OpenAlex ID: W4405778976

FWCI: 0.285

Cites: 27

Cited by: 3

Related to: 10