Work

Study on E-Mode AlGaN/GaN High-Electron Mobility Transistor with Composite P-GaN Cap and Recessed Gate Structure

Year: 2024

Type: conference-paper

DOI: 10.1109/peeiacon63629.2024.10800040

Authors: Abdullah Al Fahad, Priyotous Banik Tirtha, Arefin Ahamed Shuvo, Ashraful Ghani Bhuiyan

Institution: Khulna University of Engineering and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405787175

FWCI: 1.208

Cites: 11

Cited by: 1

Related to: 10