The Role of Ag8GeS6 Addition in p-type SnSe with Enhanced Thermoelectric Properties
Year: 2024
Type: article
Abstract: Polycrystalline SnSe is anticipated to perform in thermoelectric applications within the intermediate temperature range due to its superior machinability and more accessible synthesis conditions relative to single-crystal SnSe. Nonetheless, the subpar electrical properties of SnSe present a significant challenge in strengthening its electrical transport performance while preserving its intrinsic low heat conductivity, hence impeding the advancement of polycrystalline SnSe performance. This work examined the alterations in thermoelectric characteristics following the introduction of Ag8GeS6 compound into SnSe. When the Ag8GeS6 enters the SnSe matrix, the carrier concentration increases due to the Ag+ substitution, and the n-type second phase Ag2Se in the SnSe matrix acts as an electron attraction center also play an important role. Therefore, the electrical transport property increases from 306 μW m-1 K-2 of the pristine sample to 617 μW m-1 K-2 of the SnSe doped with 0.25 weight percent Ag8GeS6 sample at 873 K. Besides, the thermal conductivity is kept by the point defects, second phase, and dislocations, which can enhance the phonon scattering, and a low lattice thermal conductivity of 0.3 W m-1 K-1 for the SnSe doped with 0.125 weight percent Ag8GeS6 sample is obtained at 873 K. Consequently, a peak ZT value of 1.3 at 873 K and a high average ZT value of 0.57 from 323-873 K were achieved for SnSe doped with 0.25 weight percent Ag8GeS6. This demonstrates the potential in the field of power generation.
Source: Materials Lab
Author: Zhen-Hua Ge
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4405791196