Work

Gallium selenide thin films grown on silicon by plasma-enhanced chemical vapor deposition

Year: 2024

Type: article

Abstract: Gallium selenide (GaSe) thin films on silicon (111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.

Source: High Energy Chemistry

DOI: 10.31857/s0023119324040147

Authors: M. A. Kudryashov, L. A. Mochalov, Y. P. Kudryashova, E. A. Slapovskaya

Institutions: Nizhny Novgorod State Technical University, N. I. Lobachevsky State University of Nizhny Novgorod

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4405806971

FWCI:

Cites: 22

Cited by:

Related to: 10