Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices
Year: 2024
Type: article
Abstract: The praseodymium-doped indium zinc oxide (PrIZO) thin-film transistor (TFT) is promising for applications in flat-panel displays, due to its high carrier mobility and stability. Nevertheless, there are few studies on the mechanism of annealing on PrIZO films and the fabrication of flexible devices. In this work, we first optimized the annealing-process parameters on the glass substrate. As the annealing temperature rises, the film tends to be denser and obtains a lower surface roughness, a narrower optical-band gap and less oxygen-vacancy content. However, the μ-PCD test shows the 250 °C-annealed film obtains the least defects. And the PrIZO TFT annealed at 250 °C exhibited a desired performance with a saturation mobility (μsat) of 14.26 cm2·V−1·s−1, a subthreshold swing (SS) of 0.14 V·dec−1, an interface trap density (Dit) of 3.17 × 1011, an Ion/Ioff ratio of 1.83 × 108 and a threshold voltage (Vth) of −1.15 V. The flexible devices were prepared using the optimized parameters on the Polyimide (PI) substrate and subjected to static bending tests. After bending at a radius of 5 mm, the mobility of devices decreases slightly from 12.48 to 10.87 cm2·V−1·s−1, demonstrating the great potential of PrIZO for flexible displays.
Source: Micromachines
DOI: 10.3390/mi16010017
Authors: Zhenyu Wu, Honglong Ning, Han Li, Xiaoqin Wei, Dongxiang Luo, Dong Yuan, Zhihao Liang, Guoping Su, Rihui Yao, Junbiao Peng
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,955
Funders: National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province, Department of Education of Guangdong Province, State Key Laboratory of Luminescent Materials and Devices, Guangzhou University, National Key Research and Development Program of China, Science and Technology Planning Project of Guangdong Province, Basic and Applied Basic Research Foundation of Guangdong Province
Awards: G1128115066, G1400638082, G148457838, G1526265724, G1532021343, G1578367231, G1764654663, G1881688789, G190790149, G2034502567, G2136276769, G2183500725, G2210348771, G2243145413, G2291250420, G2295960383, G2429523341, G2482886710, G255067495, G2560336501, G2576847881, G2675241464, G2801507857, G281681669, G2872078557, G2889232947, G3012052741, G3061658976, G3178813082, G335579401, G3434016759, G3496335163, G3614992132, G3635187317, G3738391078, G3765287709, G4125791294, G4195469805, G4200449068, G4214312176, G4300773018, G4342375786, G4589078486, G4657090741, G4785845943, G4823808011, G4865378012, G4911555718, G4924250805, G5115356297, G5148348145, G5508047348, G5533168714, G555400864, G5667943738, G5724532952, G59828767, G6242862420, G6260755994, G6322929640, G6412941753, G6453480525, G6489129157, G6799307334, G680366278, G6810970975, G6853792027, G700778059, G7037141441, G7038984098, G7043943528, G7055962283, G7114455045, G7118997669, G7170925877, G7239113659, G7258658990, G7287851366, G7318509143, G7359515666, G7381631623, G7528854067, G7546917129, G7668915186, G7669217038, G7725659174, G7896917782, G7933604233, G7955019292, G8138022048, G8229746196, G8427746350, G8498457729, G8504234775, G8508260467, G8615491579, G8742739980, G8912984126, G8919486702, G8948649876
OpenAlex ID: W4405808465