Work

Comparison and Investigation on the Static and Dynamic Performance for Medium-Voltage (3300 V-6500 V) Ga2O3 and SiC Planar Gate MOSFETs

Year: 2024

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2024.3522297

Authors: Zhenghua Wang, Lei Yuan, Bo Peng, Yuming Zhang, Renxu Jia

Institution: Xidian University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

Awards: G3262686779, G4557115390, G50221719, G6156692778

OpenAlex ID: W4405812540

FWCI: 0.231

Cites: 39

Cited by: 3

Related to: 10