Work

Multi-Gate Finger Microwave GaN HEMTs on Si Substrates With Individual Source Vias

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3522987

Authors: Lu Hao, Zhihong Liu, Jin Zhou, Xiaoyan Li, Guangjie Gao, Hanghai Du, Weichuan Xing, Hong Zhou, Jincheng Zhang, Yue Hao

Institutions: Xidian University, Guangzhou Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: Yunnan Key Research and Development Program, Fundamental Research Funds for the Central Universities, National Science Fund for Distinguished Young Scholars

Awards: G2204112166, G3647822483, G5130430070, G7602722337

OpenAlex ID: W4405812602

FWCI: 0.446

Cites: 25

Cited by: 3

Related to: 10