Work

Design and Analysis of High‐Performance Schottky Barrier β‐ Ga2O3 MOSFET With Enhanced Drain Current, Breakdown Voltage, and PFOM

Year: 2024

Type: article

Source: International Journal of Numerical Modelling Electronic Networks Devices and Fields

DOI: 10.1002/jnm.70009

Authors: Md Zafar Alam, Imran Ahmed Khan, S. Intekhab Amin, Aadil Anam, Mirza Tariq Beg

Institution: Jamia Millia Islamia

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405821788

FWCI: 0.77

Cites: 49

Cited by: 10

Related to: 10