Work

Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field

Year: 2024

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2024.3523577

Authors: Xin Zhou, Jie Shen, Ziqiu Tong, Zhao Qi, Ming Qiao, Zhaoji Li, Bo Zhang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, National Natural Science Foundation of China

Awards: G311549450, G658893401

OpenAlex ID: W4405838403

FWCI:

Cites: 26

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Related to: 10