Current blocking layer enables enhanced NiO/β-Ga2O3 heterojunction vertical MOSFET with a higher power figure of merit
Year: 2024
Type: article
Source: Engineering Research Express
Authors: Xiaoxuan Ma, Suzhen Luan
Institution: Xi'an University of Science and Technology
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Award: G2791178095
OpenAlex ID: W4405840751