Get started
Work

Numerical proceeding to calculate impurity states in 2D semiconductor heterostructures

Year: 2024
Type: article
Abstract: The article provides and discusses details of numerical proceeding for the expansion method to calculate energy positions and wave functions of the localized and resonant electronic states emerging in quantum well-type semiconductor nanostructures because of perturbation of confined states by the Coulomb potential of the hydrogenic impurity center. Effective mass approximation is used. Several excited both resonant and non-resonant states are calculated and classified for the case of a simple rectangular GaAs/AlGaAs quantum well. Results are compared to the ones in literature.
DOI: 10.1038/s41598-024-81346-6
Authors: Volodymyr Akimov, Viktor Tulupenko, Roman Demediuk, Anton Tiutiunnyk, Carlos A. Duque, Alvaro L. Morales, David Laroze, Miguel Eduardo Mora-Ramos
Institutions: Universidad de Antioquia, Universidad de Medellín, Donbass State Engineering Academy, Donbas State Pedagogical University, University of Tarapacá, Universidad Autónoma del Estado de Morelos
Language: English
Open Access status: gold
Estimated APC paid: $2,590
OpenAlex ID: W4405842984
FWCI: 0.32
Cites: 19
Cited by: 2
Related to: 10