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High-Reliability and High-Throughput CIM 10T-SRAM for Multiplication and Accumulation Operations With 274.3 GOPS and 200–237.5 TOPS/W

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Year: 2024
Type: article
Source: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
DOI: 10.1109/tvlsi.2024.3519748
Authors: Wenjuan Lu, Lubin Xiang, Ling Wang, Chunyu Peng, Chenghu Dai, Zhiting Lin, Xiulong Wu
Institution: Anhui University
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Key Research and Development Program of Jiangxi Province, Natural Science Research of Jiangsu Higher Education Institutions of China, Anhui Provincial Key Research and Development Plan
Awards: G2022141888, G3783266103, G8264525871, G8331222254, G8606767069, G8983458719
OpenAlex ID: W4405844816
FWCI: 1.131
Cites: 15
Cited by: 11
Related to: 10
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