Work

Integrating 3T-DRAM Into 1T Layout With Substrate Bipolar Effect Using 22 nm FDSOI Technology

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3523371

Authors: Hui Xie, Jingya Cao, Rongshan He, Peng Zhou, Yu-Long Jiang, Yong Xu, Fanyu Liu, Jing Wan

Institutions: Fudan University, State Key Laboratory of ASIC and System, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Shanghai, National Natural Science Foundation of China, National Key Research and Development Program of China, Guangxi Key Research and Development Program

Awards: G2205578710, G5802249786, 基于硅/二维材料的异质多维光电探测器研究, G992288635

OpenAlex ID: W4405844879

FWCI:

Cites: 15

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Related to: 10