Work

Performance enhancement of InSnZnO thin-film transistors by modifying the dielectric–semiconductor interface with colloidal quantum dots

Year: 2024

Type: article

Abstract: Transistors featuring ALD-grown Al 2 O 3 dielectric and sputtered ITZO semiconductor layers are enhanced by spin-coated colloidal quantum dots, which effectively passivate the dielectric/semiconductor interface, leading to performance improvements.

Source: Nanoscale Advances

DOI: 10.1039/d4na00967c

Authors: Sijie Chen, Haoran Chen, Chenghui Xia, Zhenhua Sun

Institutions: Shenzhen University, Ocean University of China

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,962

Funders: Natural Science Foundation of Shenzhen City, Guangdong Science and Technology Department, Taishan Scholar Foundation of Shandong Province, Shenzhen Science and Technology Innovation Program