Work

Performance of the AlGaN/GaN HEMT with Sunken Source Connected Field Plate under High Voltage Reverse Bias Step Stress

Year: 2024

Type: article

Source: Current Natural Sciences & Engineering.

DOI: 10.63015/10s-2446.1.6

Authors: Amit Malik, Robert Laishram, D S Rawal, Manoj Saxena

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405855948

FWCI:

Cites:

Cited by:

Related to: 10