Work

Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

Year: 2024

Type: article

Abstract: This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench-IGBT (SJ-IGBT), Deep Trench SJ-IGBT (DT-SJ-IGBT), Floating p- region SJ-IGBT (FP-SJ-IGBT), and Step-Doped Collector Trench-IGBT. The operating principles of these insulated gate bipolar transistor design solutions are discussed. A particular focus is placed on the Step-Doped Collector Trench-IGBT structure, which demonstrates reduced switching losses.

Source: Doklady BGUIR

DOI: 10.35596/1729-7648-2024-22-6-81-89

Authors: Trong Thanh Nguyen, Dao Dinh Ha, I. Yu. Lovshenko, V. R. Stempitsky

Institutions: Belarusian State University of Informatics and Radioelectronics, Le Quy Don Technical University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: diamond

OpenAlex ID: W4405862261

FWCI:

Cites: 9

Cited by:

Related to: 10