Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts
Year: 2024
Type: article
Abstract: We present a novel design of gallium nitride (GaN) Schottky barrier diodes (SBDs) with a vertical micropillar structure. The micron-scale electrode design can effectively enhance the on-state current density and reduce the specific on-resistance (R on,Sp). In addition, it allows for a reduction in the turn-on voltage (V on) by minimizing the spacing between the electrodes. This phenomenon can be explained by the intensified electric field coupling between the electrodes, as confirmed from the technology computer aided design simulations. By controlling the distance between the micron pillars, the V on of the SBD varies from approximately 0.35 V to 0.46 V. These results showcase the potential of our SBD design with micropillar contacts in efficient high-power applications.
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,165
Award: G3685803086
OpenAlex ID: W4405866061