Work

Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices

Year: 2024

Type: conference-paper

Abstract: International audience

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Dagher, M, Sonneville, Camille, Planson, Dominique, Maurya, V, Buckley, J, Charles, M, Rammouz, H, Rochat, N, Frayssinet, E, Cordier, Y, Bartoli, F, Brémond, G, Bluet, J, M

Institutions: Institut des Nanotechnologies de Lyon, Institut National des Sciences Appliquées de Lyon, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: Agence Nationale de la Recherche, Electronic Components and Systems for European Leadership

Awards: G1332077954, Réseau national sur GaN

OpenAlex ID: W4405896775

FWCI:

Cites:

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Related to: 10