Work

4.1-dB Noise Figure and 20-dB Gain 92–115-GHz GaAs LNA With Hot Via Interconnections

Year: 2024

Type: article

Abstract: Advanced interconnect technologies are enabling solutions to obtain adequate low-noise amplifier performance even when the circuit is packaged and connected inside a receiver module. In this letter, we present suitable technology and design solutions of a gallium arsenide low-noise amplifier operating in the telecom W-band (92–115 GHz) featuring 20-dB gain and 4.1-dB noise figure accounting for through-the-substrate RF interconnect (hot vias) effects. To the best of the author’s knowledge, this is the first low-noise amplifier with hot via interconnections operating up to 115 GHz showing characterized data in terms of noise figure and third-order intermodulation.

Source: IEEE Microwave and Wireless Technology Letters

DOI: 10.1109/lmwt.2024.3520229

Authors: Patrick E. Longhi, Sergio Colangeli, Walter Ciccognani, Peiman Parand, Antonio Serino, Ernesto Limiti

Institution: University of Rome Tor Vergata

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,495

OpenAlex ID: W4405906846

FWCI: 0.312

Cites: 16

Cited by: 3

Related to: 10