Work

Monolithically Integrated and Galvanically Isolated GaN Gate Driver

Year: 2024

Type: article

Abstract: In this work, a novel monolithically integrated and galvanically isolated GaN gate driver is presented, which combines the separated power and data link of conventional Si-based solutions. The core is an integrated spiral transformer, which is driven on the primary side by a VHF class-D oscillator with on-off keying modulated by the PWM signal. On the secondary side, the signal is rectified and a network ensures the correct off-state. The driver was operated with PWM signals of up to 2 MHz with only one supply voltage of 8 V on the primary side. This GaN IC shows the potential to be integrated with the power transistor in the future to provide a highly compact isolated driver solution on chip.

Source: IEEE Open Journal of Power Electronics

DOI: 10.1109/ojpel.2024.3523676

Authors: Michael Basler, Richard Reiner, Daniel Grieshaber, Fouad Benkhelifa, Stefan Mönch

Institution: Fraunhofer Institute for Applied Solid State Physics

Language: English

Topic: Advanced DC-DC Converters

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: gold

Estimated APC paid: $1,995