Work

AlGaN Polarized Ultrathin Tunneling Junction Deep Ultraviolet Light-Emitting Diodes

Year: 2024

Type: article

Source: Nano Letters

DOI: 10.1021/acs.nanolett.4c05443

Authors: Ziqi Zhang, Shengjun Zhou, Zhefu Liao, Jingjing Jiang, Hansong Geng, Zhenxing Lv, Xu Liu, Shengli Qi, Sheng Liu

Institution: Wuhan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G4650193621, G5835723786, G6485031298

OpenAlex ID: W4405907219

FWCI: 2.315

Cites: 54

Cited by: 16

Related to: 10