Work

Design of Highly-Stable Energy-Minimum-Point SRAM Using Ultralow-Voltage Retention Cell

Year: 2024

Type: conference-paper

Source: IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

DOI: 10.1109/imfedk64776.2024.10814372

Authors: Katsutoshi Ito, Yusaku Shiotsu, Satoshi Sugahara

Institution: Tokyo Institute of Technology

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Synopsys, University of Tokyo

OpenAlex ID: W4405907247

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