Work

Recessed-gate GaN-based MIS-HEMTs Performance Dependence on Recess Depth

Year: 2024

Type: conference-paper

Source: IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

DOI: 10.1109/imfedk64776.2024.10814479

Authors: S. Yamao, K. Sekiyama, S. Terai, T. Igarashi, M. Ishiguro, A. Baratov, J. T. Asubar, M. Kuzuhara

Institutions: University of Fukui, Kwansei Gakuin University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors

OpenAlex ID: W4405907484

FWCI: 1.208

Cites: 5

Cited by: 1

Related to: 10