Work

Comparative Study of Gain Cells for Pseudo-SRAM

Year: 2024

Type: conference-paper

Source: IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

DOI: 10.1109/imfedk64776.2024.10814569

Authors: Sei Yoshida, Yusaku Shiotsu, Satoshi Sugahara

Institution: Tokyo Institute of Technology

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Synopsys, University of Tokyo

OpenAlex ID: W4405907637

FWCI: 0.806

Cites: 1

Cited by: 1

Related to: 10