Work

Forming free resistive switching with battery-like characteristics in Ag/ZnFe2O4/ITO ReRAM device

Year: 2024

Type: conference-paper

Source: IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

DOI: 10.1109/imfedk64776.2024.10814557

Authors: Adiba Adiba, Tufail Ahmad, Ph. Nonglen Meitei

Institutions: Aligarh Muslim University, Indian Institute of Technology Guwahati

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405907644

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Cites: 10

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Related to: 10