Work

Impact of Rapid Thermal Annealing Temperature of Cu-based ohmic stack on Performance of GaN MIS-HEMTs

Year: 2024

Type: conference-paper

Source: IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

DOI: 10.1109/imfedk64776.2024.10814601

Authors: R. T. Ahmed, S. Terai, K. Sekiyama, T. Igarashi, A. Baratov, J. T. Asubar, M. Kuzuhara

Institutions: University of Fukui, Kwansei Gakuin University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors

OpenAlex ID: W4405907681

FWCI:

Cites: 9

Cited by:

Related to: 10