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An Improved Electro-Thermal Model for GaN Gate Injection Transistor

Year: 2024

Type: conference-paper

Source: IEEE Design Methodologies Conference (DMC)

DOI: 10.1109/dmc62632.2024.10812145

Authors: Lucas Dolizy, Arnaud Videt, Ke Li

Institutions: ParisTech, Arts et Métiers, Université de Lille, Laboratoire d'Électrotechnique et d'Électronique de Puissance de Lille, JUNIA, Centrale Lille Institut, University of Nottingham

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405908297

FWCI:

Cites: 12

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Related to: 10