Work

IGBT Model for Circuit Simulations: Implementation of the Nonlinear Voltage-and Current-Dependent Capacitance Method to Silicon IGBTs

Year: 2024

Type: conference-paper

Source: IEEE Design Methodologies Conference (DMC)

DOI: 10.1109/dmc62632.2024.10812174

Authors: Ioannis Almpanis, Paul Evans, Ke Li, Neophytos Lophitis

Institutions: University of Nottingham, Cyprus University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

Awards: G2042780269, G7525711587

OpenAlex ID: W4405909001

FWCI: 2.418

Cites: 6

Cited by: 3

Related to: 10